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| Part Number | TSM033NA03CR RLG | 
| Datasheet | TSM033NA03CR RLG datasheet | 
| Description | MOSFET N-CH 30V 129A 8PDFN | 
| Manufacturer | Taiwan Semiconductor Corporation | 
| Series | - | 
| Part Status | Active | 
| FET Type | N-Channel | 
| Technology | MOSFET (Metal Oxide) | 
| Drain to Source Voltage (Vdss) | 30V | 
| Current - Continuous Drain (Id) @ 25°C | 129A (Tc) | 
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V | 
| Rds On (Max) @ Id, Vgs | 3.3 mOhm @ 21A, 10V | 
| Vgs(th) (Max) @ Id | 2.5V @ 250µA | 
| Gate Charge (Qg) (Max) @ Vgs | 31nC @ 10V | 
| Vgs (Max) | ±20V | 
| Input Capacitance (Ciss) (Max) @ Vds | 1850pF @ 15V | 
| FET Feature | - | 
| Power Dissipation (Max) | 96W (Tc) | 
| Operating Temperature | -55°C ~ 150°C (TJ) | 
| Mounting Type | Surface Mount | 
| Supplier Device Package | 8-PDFN (5x6) | 
| Package / Case | 8-PowerTDFN |