
Home / Products / Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single, Pre-Biased / FJN3312RBU

| Part Number | FJN3312RBU | 
| Datasheet | FJN3312RBU datasheet | 
| Description | TRANS PREBIAS NPN 300MW TO92-3 | 
| Manufacturer | ON Semiconductor | 
| Series | - | 
| Part Status | Obsolete | 
| Transistor Type | NPN - Pre-Biased | 
| Current - Collector (Ic) (Max) | 100mA | 
| Voltage - Collector Emitter Breakdown (Max) | 40V | 
| Resistor - Base (R1) | 47 kOhms | 
| Resistor - Emitter Base (R2) | - | 
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 1mA, 5V | 
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 1mA, 10mA | 
| Current - Collector Cutoff (Max) | 100nA (ICBO) | 
| Frequency - Transition | 250MHz | 
| Power - Max | 300mW | 
| Mounting Type | Through Hole | 
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) | 
| Supplier Device Package | TO-92-3 |