Home / Products / Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single / 2N2222AE3
Part Number | 2N2222AE3 |
Datasheet | 2N2222AE3 datasheet |
Description | SMALL-SIGNAL BJT |
Manufacturer | Microsemi Corporation |
Series | - |
Part Status | Active |
Transistor Type | NPN |
Current - Collector (Ic) (Max) | 800mA |
Voltage - Collector Emitter Breakdown (Max) | 50V |
Vce Saturation (Max) @ Ib, Ic | 1V @ 50mA, 500mA |
Current - Collector Cutoff (Max) | 50nA |
DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 150mA, 10V |
Power - Max | 500mW |
Frequency - Transition | - |
Operating Temperature | -65°C ~ 200°C (TJ) |
Mounting Type | Through Hole |
Package / Case | TO-206AA, TO-18-3 Metal Can |
Supplier Device Package | TO-18 |