Home / Products / Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single / 2N2222AE3

Product Introduction

2N2222AE3

Part Number
2N2222AE3
Manufacturer/Brand
Microsemi Corporation
Description
SMALL-SIGNAL BJT
Category
Transistors - Bipolar (BJT) - Single
RoHs Status
Lead free / RoHS Compliant
Series
-
Quantity
5338pcs Stock Available.

Quick Order

Company
Contact
Phone
Email
Country
Content
Images are for reference only
See Product Specifications

Product Specifications

Part Number 2N2222AE3
Description SMALL-SIGNAL BJT
Manufacturer Microsemi Corporation
Series -
Part Status Active
Transistor Type NPN
Current - Collector (Ic) (Max) 800mA
Voltage - Collector Emitter Breakdown (Max) 50V
Vce Saturation (Max) @ Ib, Ic 1V @ 50mA, 500mA
Current - Collector Cutoff (Max) 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 150mA, 10V
Power - Max 500mW
Frequency - Transition -
Operating Temperature -65°C ~ 200°C (TJ)
Mounting Type Through Hole
Package / Case TO-206AA, TO-18-3 Metal Can
Supplier Device Package TO-18

Latest Products for Transistors - Bipolar (BJT) - Single

2N6191

Microsemi Corporation

PNP POWER TRANSISTOR SILICON AMP

2N6193U3

Microsemi Corporation

PNP POWER TRANSISTOR SILICON AMP

2N6212

Microsemi Corporation

PNP POWER TRANSISTOR SILICON AMP

2N6213

Microsemi Corporation

PNP POWER TRANSISTOR SILICON AMP

2N6233

Microsemi Corporation

NPN TRANSISTOR

2N6235

Microsemi Corporation

NPN TRANSISTOR