Home / Products / Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single / NJVMJD112T4G

Product Introduction

NJVMJD112T4G

Part Number
NJVMJD112T4G
Manufacturer/Brand
ON Semiconductor
Description
TRANS NPN DARL 100V 2A DPAK
Category
Transistors - Bipolar (BJT) - Single
RoHs Status
Lead free / RoHS Compliant
Series
-
Quantity
2607pcs Stock Available.

Quick Order

Company
Contact
Phone
Email
Country
Content
Images are for reference only
See Product Specifications

Product Specifications

Part Number NJVMJD112T4G
Datasheet NJVMJD112T4G datasheet
Description TRANS NPN DARL 100V 2A DPAK
Manufacturer ON Semiconductor
Series -
Part Status Active
Transistor Type NPN - Darlington
Current - Collector (Ic) (Max) 2A
Voltage - Collector Emitter Breakdown (Max) 100V
Vce Saturation (Max) @ Ib, Ic 3V @ 40mA, 4A
Current - Collector Cutoff (Max) 20µA
DC Current Gain (hFE) (Min) @ Ic, Vce 1000 @ 2A, 3V
Power - Max 20W
Frequency - Transition 25MHz
Operating Temperature -65°C ~ 150°C (TJ)
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package DPAK

Latest Products for Transistors - Bipolar (BJT) - Single

SBC847CWT1G

ON Semiconductor

TRANS NPN 45V 0.1A SOT-323

SMMBT3906WT1G

ON Semiconductor

TRANS PNP 40V 0.2A SC70

BC846BWT1G

ON Semiconductor

TRANS NPN 65V 0.1A SC-70

SMMBTA06WT1G

ON Semiconductor

TRANS NPN 80V 0.5A SC70-3

BC807-40WT1G

ON Semiconductor

TRANS PNP 45V 0.5A SC-70

NSVBC817-40WT1G

ON Semiconductor

TRANS NPN GP 45V 500MA SC70-3