Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single / FDI045N10A
Part Number | FDI045N10A |
Datasheet | FDI045N10A datasheet |
Description | MOSFET N-CH 100V 120A I2PAK-3 |
Manufacturer | ON Semiconductor |
Series | PowerTrench® |
Part Status | Obsolete |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 100V |
Current - Continuous Drain (Id) @ 25°C | 120A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 4.5 mOhm @ 100A, 10V |
Vgs(th) (Max) @ Id | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 74nC @ 10V |
Vgs (Max) | ±20V |
Input Capacitance (Ciss) (Max) @ Vds | 5270pF @ 50V |
FET Feature | - |
Power Dissipation (Max) | 263W (Tc) |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | I2PAK (TO-262) |
Package / Case | TO-262-3 Long Leads, I²Pak, TO-262AA |