Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single / IPI045N10N3GXKSA1

Product Introduction

IPI045N10N3GXKSA1

Part Number
IPI045N10N3GXKSA1
Manufacturer/Brand
Infineon Technologies
Description
MOSFET N-CH 100V 100A TO262-3
Category
Transistors - FETs, MOSFETs - Single
RoHs Status
Lead free / RoHS Compliant
Series
OptiMOS™
Quantity
347pcs Stock Available.

Quick Order

Company
Contact
Phone
Email
Country
Content
Images are for reference only
See Product Specifications

Product Specifications

Part Number IPI045N10N3GXKSA1
Datasheet IPI045N10N3GXKSA1 datasheet
Description MOSFET N-CH 100V 100A TO262-3
Manufacturer Infineon Technologies
Series OptiMOS™
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100V
Current - Continuous Drain (Id) @ 25°C 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Rds On (Max) @ Id, Vgs 4.5 mOhm @ 100A, 10V
Vgs(th) (Max) @ Id 3.5V @ 150µA
Gate Charge (Qg) (Max) @ Vgs 117nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 8410pF @ 50V
FET Feature -
Power Dissipation (Max) 214W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package PG-TO262-3
Package / Case TO-262-3 Long Leads, I²Pak, TO-262AA

Latest Products for Transistors - FETs, MOSFETs - Single

IPW65R099C6FKSA1

Infineon Technologies

MOSFET N-CH 650V 38A TO-247

SPW16N50C3FKSA1

Infineon Technologies

MOSFET N-CH 560V 16A TO-247

IPW65R095C7XKSA1

Infineon Technologies

MOSFET N-CH 650V 24A TO247

IPW65R041CFDFKSA1

Infineon Technologies

MOSFET N CH 650V 68.5A PG-TO247

IPW90R800C3FKSA1

Infineon Technologies

MOSFET N-CH 900V 6.9A TO-247

IPW60R125CPFKSA1

Infineon Technologies

MOSFET N-CH 600V 25A TO-247

Related Products