Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single / IXTU5N50P
Part Number | IXTU5N50P |
Datasheet | IXTU5N50P datasheet |
Description | MOSFET N-CH 500V 4.8A TO-252 |
Manufacturer | IXYS |
Series | PolarHV™ |
Part Status | Active |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 500V |
Current - Continuous Drain (Id) @ 25°C | 4.8A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 1.4 Ohm @ 2.4A, 10V |
Vgs(th) (Max) @ Id | 5.5V @ 50µA |
Gate Charge (Qg) (Max) @ Vgs | 12.6nC @ 10V |
Vgs (Max) | ±30V |
Input Capacitance (Ciss) (Max) @ Vds | 620pF @ 25V |
FET Feature | - |
Power Dissipation (Max) | 89W (Tc) |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | TO-252, (D-Pak) |
Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |