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Product Introduction

IPB011N04NGATMA1

Part Number
IPB011N04NGATMA1
Manufacturer/Brand
Infineon Technologies
Description
MOSFET N-CH 40V 180A TO263-7
Category
Transistors - FETs, MOSFETs - Single
RoHs Status
Lead free / RoHS Compliant
Series
OptiMOS™
Quantity
1156pcs Stock Available.

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Product Specifications

Part Number IPB011N04NGATMA1
Datasheet IPB011N04NGATMA1 datasheet
Description MOSFET N-CH 40V 180A TO263-7
Manufacturer Infineon Technologies
Series OptiMOS™
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40V
Current - Continuous Drain (Id) @ 25°C 180A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 1.1 mOhm @ 100A, 10V
Vgs(th) (Max) @ Id 4V @ 200µA
Gate Charge (Qg) (Max) @ Vgs 250nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 20000pF @ 20V
FET Feature -
Power Dissipation (Max) 250W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PG-TO263-7-3
Package / Case TO-263-7, D²Pak (6 Leads + Tab)

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