
Home / Products / Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Arrays / NSVEMX1DXV6T1G

| Part Number | NSVEMX1DXV6T1G | 
| Datasheet | NSVEMX1DXV6T1G datasheet | 
| Description | TRANS 2NPN 50V 0.1A SOT563 | 
| Manufacturer | ON Semiconductor | 
| Series | - | 
| Part Status | Active | 
| Transistor Type | 2 NPN (Dual) | 
| Current - Collector (Ic) (Max) | 100mA | 
| Voltage - Collector Emitter Breakdown (Max) | 50V | 
| Vce Saturation (Max) @ Ib, Ic | 400mV @ 5mA, 50mA | 
| Current - Collector Cutoff (Max) | 500nA (ICBO) | 
| DC Current Gain (hFE) (Min) @ Ic, Vce | 120 @ 1mA, 6V | 
| Power - Max | 500mW | 
| Frequency - Transition | 180MHz | 
| Operating Temperature | -55°C ~ 150°C (TJ) | 
| Mounting Type | Surface Mount | 
| Package / Case | SOT-563, SOT-666 | 
| Supplier Device Package | SOT-563 |