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| Part Number | IXTA1R6N100D2HV |
| Datasheet | IXTA1R6N100D2HV datasheet |
| Description | MOSFET N-CH |
| Manufacturer | IXYS |
| Series | - |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 1000V |
| Current - Continuous Drain (Id) @ 25°C | 1.6A (Tj) |
| Drive Voltage (Max Rds On, Min Rds On) | 0V |
| Rds On (Max) @ Id, Vgs | 10 Ohm @ 800mA, 0V |
| Vgs(th) (Max) @ Id | 4.5V @ 100µA |
| Gate Charge (Qg) (Max) @ Vgs | 27nC @ 5V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 645pF @ 10V |
| FET Feature | Depletion Mode |
| Power Dissipation (Max) | 100W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | TO-263HV |
| Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |