Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single / PMXB350UPEZ
Part Number | PMXB350UPEZ |
Datasheet | PMXB350UPEZ datasheet |
Description | MOSFET P-CH 20V 1.2A 3DFN |
Manufacturer | Nexperia USA Inc. |
Series | - |
Part Status | Active |
FET Type | P-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 20V |
Current - Continuous Drain (Id) @ 25°C | 1.2A (Ta) |
Drive Voltage (Max Rds On, Min Rds On) | 1.2V, 4.5V |
Rds On (Max) @ Id, Vgs | 447 mOhm @ 1.2A, 4.5V |
Vgs(th) (Max) @ Id | 950mV @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 2.3nC @ 4.5V |
Vgs (Max) | ±8V |
Input Capacitance (Ciss) (Max) @ Vds | 116pF @ 10V |
FET Feature | - |
Power Dissipation (Max) | 360mW (Ta), 5.68W (Tc) |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | DFN1010D-3 |
Package / Case | 3-XDFN Exposed Pad |