Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single / STD11NM60ND
Part Number | STD11NM60ND |
Datasheet | STD11NM60ND datasheet |
Description | MOSFET N-CH 600V 10A DPAK |
Manufacturer | STMicroelectronics |
Series | FDmesh™ II |
Part Status | Active |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 600V |
Current - Continuous Drain (Id) @ 25°C | 10A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 450 mOhm @ 5A, 10V |
Vgs(th) (Max) @ Id | 5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 30nC @ 10V |
Vgs (Max) | ±25V |
Input Capacitance (Ciss) (Max) @ Vds | 850pF @ 50V |
FET Feature | - |
Power Dissipation (Max) | 90W (Tc) |
Operating Temperature | 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | DPAK |
Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |