Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single / 2N6770T1
Part Number | 2N6770T1 |
Datasheet | 2N6770T1 datasheet |
Description | MOSFET N-CH 500V 12A TO-254AA |
Manufacturer | Microsemi Corporation |
Series | - |
Part Status | Active |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 500V |
Current - Continuous Drain (Id) @ 25°C | 12A (Ta) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 500 mOhm @ 12A, 10V |
Vgs(th) (Max) @ Id | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 120nC @ 10V |
Vgs (Max) | ±20V |
Input Capacitance (Ciss) (Max) @ Vds | - |
FET Feature | - |
Power Dissipation (Max) | 4W (Ta), 150W (Tc) |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | TO-254AA |
Package / Case | TO-254-3, TO-254AA (Straight Leads) |