Home / Products / Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single / 2N4449UB
Part Number | 2N4449UB |
Datasheet | 2N4449UB datasheet |
Description | NPN TRANSISTOR |
Manufacturer | Microsemi Corporation |
Series | Military, MIL-PRF-19500/317 |
Part Status | Active |
Transistor Type | NPN |
Current - Collector (Ic) (Max) | - |
Voltage - Collector Emitter Breakdown (Max) | 20V |
Vce Saturation (Max) @ Ib, Ic | 450mV @ 10mA, 100mA |
Current - Collector Cutoff (Max) | 400nA |
DC Current Gain (hFE) (Min) @ Ic, Vce | 20 @ 100mA, 1V |
Power - Max | 360mW |
Frequency - Transition | - |
Operating Temperature | -65°C ~ 200°C (TJ) |
Mounting Type | Surface Mount |
Package / Case | - |
Supplier Device Package | UB |