Product Introduction
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See Product Specifications
Product Specifications
Part Number |
IRF610S |
Datasheet |
IRF610S datasheet |
Description |
MOSFET N-CH 200V 3.3A D2PAK |
Manufacturer |
Vishay Siliconix |
Series |
- |
Part Status |
Obsolete |
FET Type |
N-Channel |
Technology |
MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) |
200V |
Current - Continuous Drain (Id) @ 25°C |
3.3A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) |
10V |
Rds On (Max) @ Id, Vgs |
1.5 Ohm @ 2A, 10V |
Vgs(th) (Max) @ Id |
4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs |
8.2nC @ 10V |
Vgs (Max) |
±20V |
Input Capacitance (Ciss) (Max) @ Vds |
140pF @ 25V |
FET Feature |
- |
Power Dissipation (Max) |
3W (Ta), 36W (Tc) |
Operating Temperature |
-55°C ~ 150°C (TJ) |
Mounting Type |
Surface Mount |
Supplier Device Package |
D2PAK |
Package / Case |
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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