Home / Products / Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Arrays, Pre-Biased / EMB11FHAT2R

Product Introduction

EMB11FHAT2R

Part Number
EMB11FHAT2R
Manufacturer/Brand
Rohm Semiconductor
Description
TRANS 2PNP 100MA EMT6
Category
Transistors - Bipolar (BJT) - Arrays, Pre-Biased
RoHs Status
Lead free / RoHS Compliant
Series
Automotive, AEC-Q101
Quantity
8197pcs Stock Available.

Quick Order

Company
Contact
Phone
Email
Country
Content
Images are for reference only
See Product Specifications

Product Specifications

Part Number EMB11FHAT2R
Description TRANS 2PNP 100MA EMT6
Manufacturer Rohm Semiconductor
Series Automotive, AEC-Q101
Part Status Active
Transistor Type 2 PNP Pre-Biased (Dual)
Current - Collector (Ic) (Max) 100mA
Voltage - Collector Emitter Breakdown (Max) -
Resistor - Base (R1) 10 kOhms
Resistor - Emitter Base (R2) 10 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce 30 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max) -
Frequency - Transition 250MHz
Power - Max 150mW
Mounting Type Surface Mount
Package / Case SOT-563, SOT-666
Supplier Device Package EMT6

Latest Products for Transistors - Bipolar (BJT) - Arrays, Pre-Biased

RN1511(TE85L,F)

Toshiba Semiconductor and Storage

TRANS 2NPN PREBIAS 0.3W SMV

RN2503(TE85L,F)

Toshiba Semiconductor and Storage

TRANS 2PNP PREBIAS 0.3W SMV

RN2504(TE85L,F)

Toshiba Semiconductor and Storage

TRANS 2PNP PREBIAS 0.3W SMV

RN2507(TE85L,F)

Toshiba Semiconductor and Storage

TRANS 2PNP PREBIAS 0.3W SMV

RN1507(TE85L,F)

Toshiba Semiconductor and Storage

TRANS 2NPN PREBIAS 0.3W SMV

RN2505TE85LF

Toshiba Semiconductor and Storage

TRANS 2PNP PREBIAS 0.3W SMV