Home / Products / Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single / BFN19H6327XTSA1
Part Number | BFN19H6327XTSA1 |
Datasheet | BFN19H6327XTSA1 datasheet |
Description | TRANSISTOR AF SOT89-4 |
Manufacturer | Infineon Technologies |
Series | Automotive, AEC-Q101 |
Part Status | Last Time Buy |
Transistor Type | PNP |
Current - Collector (Ic) (Max) | 200mA |
Voltage - Collector Emitter Breakdown (Max) | 300V |
Vce Saturation (Max) @ Ib, Ic | 500mV @ 2mA, 20mA |
Current - Collector Cutoff (Max) | 100nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce | 30 @ 30mA, 10V |
Power - Max | 1W |
Frequency - Transition | 100MHz |
Operating Temperature | 150°C (TJ) |
Mounting Type | Surface Mount |
Package / Case | TO-243AA |
Supplier Device Package | PG-SOT89 |