Home / Products / Discrete Semiconductor Products / Transistors - IGBTs - Single / RJP65T43DPQ-A0#T2
Part Number | RJP65T43DPQ-A0#T2 |
Datasheet | RJP65T43DPQ-A0#T2 datasheet |
Description | IGBT TRENCH 650V 60A TO247A |
Manufacturer | Renesas Electronics America |
Series | - |
Part Status | Active |
IGBT Type | Trench |
Voltage - Collector Emitter Breakdown (Max) | 650V |
Current - Collector (Ic) (Max) | 60A |
Current - Collector Pulsed (Icm) | - |
Vce(on) (Max) @ Vge, Ic | 2.4V @ 15V, 20A |
Power - Max | 150W |
Switching Energy | 170µJ (on), 130µJ (off) |
Input Type | Standard |
Gate Charge | 69nC |
Td (on/off) @ 25°C | 35ns/105ns |
Test Condition | 400V, 20A, 10 Ohm, 15V |
Reverse Recovery Time (trr) | - |
Operating Temperature | 175°C (TJ) |
Mounting Type | Through Hole |
Package / Case | TO-247-3 |
Supplier Device Package | TO-247A |