
Home / Products / Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Arrays, Pre-Biased / PBLS1502V,115

| Part Number | PBLS1502V,115 |
| Datasheet | PBLS1502V,115 datasheet |
| Description | TRANS NPN PREBIAS/PNP SOT666 |
| Manufacturer | NXP USA Inc. |
| Series | - |
| Part Status | Obsolete |
| Transistor Type | 1 NPN Pre-Biased, 1 PNP |
| Current - Collector (Ic) (Max) | 100mA, 500mA |
| Voltage - Collector Emitter Breakdown (Max) | 50V, 15V |
| Resistor - Base (R1) | 4.7 kOhms |
| Resistor - Emitter Base (R2) | 4.7 kOhms |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 30 @ 10mA, 5V / 150 @ 100mA, 2V |
| Vce Saturation (Max) @ Ib, Ic | 150mV @ 500µA, 10mA / 250mV @ 50mA, 500mA |
| Current - Collector Cutoff (Max) | 1µA, 100nA |
| Frequency - Transition | 280MHz |
| Power - Max | 300mW |
| Mounting Type | Surface Mount |
| Package / Case | SOT-563, SOT-666 |
| Supplier Device Package | SOT-666 |