Home / Products / Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single, Pre-Biased / RN1424TE85LF
Part Number | RN1424TE85LF |
Datasheet | RN1424TE85LF datasheet |
Description | TRANS PREBIAS NPN 200MW SMINI |
Manufacturer | Toshiba Semiconductor and Storage |
Series | - |
Part Status | Active |
Transistor Type | NPN - Pre-Biased |
Current - Collector (Ic) (Max) | 800mA |
Voltage - Collector Emitter Breakdown (Max) | 50V |
Resistor - Base (R1) | 10 kOhms |
Resistor - Emitter Base (R2) | 10 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce | 90 @ 100mA, 1V |
Vce Saturation (Max) @ Ib, Ic | 250mV @ 1mA, 50mA |
Current - Collector Cutoff (Max) | 500nA |
Frequency - Transition | 300MHz |
Power - Max | 200mW |
Mounting Type | Surface Mount |
Package / Case | TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package | S-Mini |