Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single / STD3NM60-1
Part Number | STD3NM60-1 |
Datasheet | STD3NM60-1 datasheet |
Description | MOSFET N-CH 600V 3A IPAK |
Manufacturer | STMicroelectronics |
Series | MDmesh™ |
Part Status | Obsolete |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 600V |
Current - Continuous Drain (Id) @ 25°C | 3A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 1.5 Ohm @ 1.5A, 10V |
Vgs(th) (Max) @ Id | 5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 14nC @ 10V |
Vgs (Max) | ±30V |
Input Capacitance (Ciss) (Max) @ Vds | 324pF @ 25V |
FET Feature | - |
Power Dissipation (Max) | 42W (Tc) |
Operating Temperature | -65°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | I-PAK |
Package / Case | TO-251-3 Short Leads, IPak, TO-251AA |