Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single / IPAW60R360P7SXKSA1
Part Number | IPAW60R360P7SXKSA1 |
Datasheet | IPAW60R360P7SXKSA1 datasheet |
Description | MOSFET N-CHANNEL 650V 9A TO220 |
Manufacturer | Infineon Technologies |
Series | CoolMOS™ P7 |
Part Status | Active |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 650V |
Current - Continuous Drain (Id) @ 25°C | 9A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 360 mOhm @ 2.7A, 10V |
Vgs(th) (Max) @ Id | 4V @ 140µA |
Gate Charge (Qg) (Max) @ Vgs | 13nC @ 10V |
Vgs (Max) | ±30V |
Input Capacitance (Ciss) (Max) @ Vds | 555pF @ 400V |
FET Feature | - |
Power Dissipation (Max) | 22W (Tc) |
Operating Temperature | -40°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | PG-TO220 Full Pack |
Package / Case | TO-220-3 Full Pack |