Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single / FCP22N60N-F102
Part Number | FCP22N60N-F102 |
Datasheet | FCP22N60N-F102 datasheet |
Description | MOSFET N-CH 600V 22A TO220-3 |
Manufacturer | ON Semiconductor |
Series | - |
Part Status | Active |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 600V |
Current - Continuous Drain (Id) @ 25°C | 22A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 165 mOhm @ 11A, 10V |
Vgs(th) (Max) @ Id | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 45nC @ 10V |
Vgs (Max) | ±45V |
Input Capacitance (Ciss) (Max) @ Vds | 1950pF @ 100V |
FET Feature | - |
Power Dissipation (Max) | 205W (Tc) |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | TO-220-3 |
Package / Case | TO-220-3 |