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Product Introduction

IXTQ200N10T

Part Number
IXTQ200N10T
Manufacturer/Brand
IXYS
Description
MOSFET N-CH 100V 200A TO-3P
Category
Transistors - FETs, MOSFETs - Single
RoHs Status
Lead free / RoHS Compliant
Series
TrenchMV™
Quantity
179pcs Stock Available.

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Product Specifications

Part Number IXTQ200N10T
Datasheet IXTQ200N10T datasheet
Description MOSFET N-CH 100V 200A TO-3P
Manufacturer IXYS
Series TrenchMV™
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100V
Current - Continuous Drain (Id) @ 25°C 200A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 5.5 mOhm @ 50A, 10V
Vgs(th) (Max) @ Id 4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 152nC @ 10V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 9400pF @ 25V
FET Feature -
Power Dissipation (Max) 550W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-3P
Package / Case TO-3P-3, SC-65-3

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