Product Introduction
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See Product Specifications
Product Specifications
Part Number |
IRF7663 |
Datasheet |
IRF7663 datasheet |
Description |
MOSFET P-CH 20V 8.2A MICRO8 |
Manufacturer |
Infineon Technologies |
Series |
HEXFET® |
Part Status |
Obsolete |
FET Type |
P-Channel |
Technology |
MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) |
20V |
Current - Continuous Drain (Id) @ 25°C |
8.2A (Ta) |
Drive Voltage (Max Rds On, Min Rds On) |
2.5V, 4.5V |
Rds On (Max) @ Id, Vgs |
20 mOhm @ 7A, 4.5V |
Vgs(th) (Max) @ Id |
1.2V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs |
45nC @ 5V |
Vgs (Max) |
±12V |
Input Capacitance (Ciss) (Max) @ Vds |
2520pF @ 10V |
FET Feature |
- |
Power Dissipation (Max) |
1.8W (Ta) |
Operating Temperature |
- |
Mounting Type |
Surface Mount |
Supplier Device Package |
Micro8™ |
Package / Case |
8-TSSOP, 8-MSOP (0.118", 3.00mm Width) |
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