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Part Number | APT10SCD65KCT |
Datasheet | APT10SCD65KCT datasheet |
Description | DIODE SILICON 650V 17A TO220 |
Manufacturer | Microsemi Corporation |
Series | - |
Part Status | Obsolete |
Diode Configuration | 1 Pair Common Cathode |
Diode Type | Silicon Carbide Schottky |
Voltage - DC Reverse (Vr) (Max) | 650V |
Current - Average Rectified (Io) (per Diode) | 17A |
Voltage - Forward (Vf) (Max) @ If | 1.8V @ 10A |
Speed | No Recovery Time > 500mA (Io) |
Reverse Recovery Time (trr) | 0ns |
Current - Reverse Leakage @ Vr | 200µA @ 650V |
Operating Temperature - Junction | -55°C ~ 150°C |
Mounting Type | Through Hole |
Package / Case | TO-220-3 |
Supplier Device Package | TO-220 |