Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single / CTLDM8120-M621H TR
Part Number | CTLDM8120-M621H TR |
Datasheet | CTLDM8120-M621H TR datasheet |
Description | MOSFET P-CH 20V DFN6 |
Manufacturer | Central Semiconductor Corp |
Series | - |
Part Status | Obsolete |
FET Type | P-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 20V |
Current - Continuous Drain (Id) @ 25°C | 950mA (Ta) |
Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 4.5V |
Rds On (Max) @ Id, Vgs | 150 mOhm @ 950mA, 4.5V |
Vgs(th) (Max) @ Id | 1V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 3.56nC @ 4.5V |
Vgs (Max) | 8V |
Input Capacitance (Ciss) (Max) @ Vds | 200pF @ 16V |
FET Feature | - |
Power Dissipation (Max) | 1.6W (Ta) |
Operating Temperature | -65°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | TLM621H |
Package / Case | 6-XFDFN Exposed Pad |