Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single / IRFB3207ZGPBF
Product Introduction
IRFB3207ZGPBF
- Part Number
- IRFB3207ZGPBF
- Manufacturer/Brand
- Infineon Technologies
- Description
- MOSFET N-CH 75V 120A TO-220AB
- Category
- Transistors - FETs, MOSFETs - Single
- RoHs Status
- Lead free / RoHS Compliant
- Series
- HEXFET®
- Quantity
- 186pcs Stock Available.
Images are for reference only
See Product Specifications
See Product Specifications
Product Specifications
| Part Number | IRFB3207ZGPBF |
| Datasheet | IRFB3207ZGPBF datasheet |
| Description | MOSFET N-CH 75V 120A TO-220AB |
| Manufacturer | Infineon Technologies |
| Series | HEXFET® |
| Part Status | Not For New Designs |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 75V |
| Current - Continuous Drain (Id) @ 25°C | 120A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 4.1 mOhm @ 75A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 150µA |
| Gate Charge (Qg) (Max) @ Vgs | 170nC @ 10V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 6920pF @ 50V |
| FET Feature | - |
| Power Dissipation (Max) | 300W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-220AB |
| Package / Case | TO-220-3 |
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