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| Part Number | TPC6110(TE85L,F,M) |
| Datasheet | TPC6110(TE85L,F,M) datasheet |
| Description | MOSFET P-CH 30V 4.5A VS6 |
| Manufacturer | Toshiba Semiconductor and Storage |
| Series | U-MOSVI |
| Part Status | Active |
| FET Type | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 4.5A (Ta) |
| Drive Voltage (Max Rds On, Min Rds On) | - |
| Rds On (Max) @ Id, Vgs | 56 mOhm @ 2.2A, 10V |
| Vgs(th) (Max) @ Id | 2V @ 100µA |
| Gate Charge (Qg) (Max) @ Vgs | 14nC @ 10V |
| Vgs (Max) | - |
| Input Capacitance (Ciss) (Max) @ Vds | 510pF @ 10V |
| FET Feature | - |
| Power Dissipation (Max) | 700mW (Ta) |
| Operating Temperature | 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | VS-6 (2.9x2.8) |
| Package / Case | SOT-23-6 Thin, TSOT-23-6 |