Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single / FQPF33N10
Part Number | FQPF33N10 |
Datasheet | FQPF33N10 datasheet |
Description | MOSFET N-CH 100V 18A TO-220F |
Manufacturer | ON Semiconductor |
Series | QFET® |
Part Status | Active |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 100V |
Current - Continuous Drain (Id) @ 25°C | 18A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 52 mOhm @ 9A, 10V |
Vgs(th) (Max) @ Id | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 51nC @ 10V |
Vgs (Max) | ±25V |
Input Capacitance (Ciss) (Max) @ Vds | 1500pF @ 25V |
FET Feature | - |
Power Dissipation (Max) | 41W (Tc) |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | TO-220F |
Package / Case | TO-220-3 Full Pack |