Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Arrays / SIB912DK-T1-GE3
Part Number | SIB912DK-T1-GE3 |
Datasheet | SIB912DK-T1-GE3 datasheet |
Description | MOSFET 2N-CH 20V 1.5A SC-75-6 |
Manufacturer | Vishay Siliconix |
Series | TrenchFET® |
Part Status | Active |
FET Type | 2 N-Channel (Dual) |
FET Feature | Logic Level Gate |
Drain to Source Voltage (Vdss) | 20V |
Current - Continuous Drain (Id) @ 25°C | 1.5A |
Rds On (Max) @ Id, Vgs | 216 mOhm @ 1.8A, 4.5V |
Vgs(th) (Max) @ Id | 1V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 3nC @ 8V |
Input Capacitance (Ciss) (Max) @ Vds | 95pF @ 10V |
Power - Max | 3.1W |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Package / Case | PowerPAK® SC-75-6L Dual |
Supplier Device Package | PowerPAK® SC-75-6L Dual |