Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single / SQ2325ES-T1_GE3
Part Number | SQ2325ES-T1_GE3 |
Datasheet | SQ2325ES-T1_GE3 datasheet |
Description | MOSFET P-CH 150V 840MA TO236 |
Manufacturer | Vishay Siliconix |
Series | Automotive, AEC-Q101, TrenchFET® |
Part Status | Active |
FET Type | P-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 150V |
Current - Continuous Drain (Id) @ 25°C | 840mA (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 1.77 Ohm @ 500mA, 10V |
Vgs(th) (Max) @ Id | 3.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 10nC @ 10V |
Vgs (Max) | ±20V |
Input Capacitance (Ciss) (Max) @ Vds | 250pF @ 50V |
FET Feature | - |
Power Dissipation (Max) | 3W (Tc) |
Operating Temperature | -55°C ~ 175°C (TA) |
Mounting Type | Surface Mount |
Supplier Device Package | TO-236 (SOT-23) |
Package / Case | TO-236-3, SC-59, SOT-23-3 |