Home / Products / Discrete Semiconductor Products / Transistors - IGBTs - Modules / FD-DF80R12W1H3_B52
Part Number | FD-DF80R12W1H3_B52 |
Datasheet | FD-DF80R12W1H3_B52 datasheet |
Description | IGBT MODULE VCES 1200V 40A |
Manufacturer | Infineon Technologies |
Series | - |
Part Status | Active |
IGBT Type | Trench Field Stop |
Configuration | Single |
Voltage - Collector Emitter Breakdown (Max) | 1200V |
Current - Collector (Ic) (Max) | 40A |
Power - Max | 215W |
Vce(on) (Max) @ Vge, Ic | 2.4V @ 15V, 40A |
Current - Collector Cutoff (Max) | 1mA |
Input Capacitance (Cies) @ Vce | 235nF @ 25V |
Input | Standard |
NTC Thermistor | Yes |
Operating Temperature | -40°C ~ 125°C |
Mounting Type | Chassis Mount |
Package / Case | Module |
Supplier Device Package | Module |