Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single / TPN2R805PL,L1Q
Product Introduction
TPN2R805PL,L1Q
- Part Number
- TPN2R805PL,L1Q
- Manufacturer/Brand
- Toshiba Semiconductor and Storage
- Description
- X35 PB-F POWER MOSFET TRANSISTOR
- Category
- Transistors - FETs, MOSFETs - Single
- RoHs Status
- Lead free / RoHS Compliant
- Series
- U-MOSIX-H
- Quantity
- 379pcs Stock Available.
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See Product Specifications
See Product Specifications
Product Specifications
| Part Number | TPN2R805PL,L1Q |
| Description | X35 PB-F POWER MOSFET TRANSISTOR |
| Manufacturer | Toshiba Semiconductor and Storage |
| Series | U-MOSIX-H |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 45V |
| Current - Continuous Drain (Id) @ 25°C | 139A (Ta), 80A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Rds On (Max) @ Id, Vgs | 2.8 mOhm @ 40A, 10V |
| Vgs(th) (Max) @ Id | 2.4V @ 300µA |
| Gate Charge (Qg) (Max) @ Vgs | 39nC @ 10V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 3.2nF @ 22.5V |
| FET Feature | - |
| Power Dissipation (Max) | 2.67W (Ta), 104W (Tc) |
| Operating Temperature | 175°C |
| Mounting Type | Surface Mount |
| Supplier Device Package | 8-TSON Advance (3.3x3.3) |
| Package / Case | 8-PowerVDFN |
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