
Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single / SQ2303ES-T1_GE3
Part Number | SQ2303ES-T1_GE3 |
Datasheet | SQ2303ES-T1_GE3 datasheet |
Description | MOSFET P-CHAN 30V SOT23 |
Manufacturer | Vishay Siliconix |
Series | Automotive, AEC-Q101, TrenchFET® |
Part Status | Active |
FET Type | P-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 30V |
Current - Continuous Drain (Id) @ 25°C | 2.5A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
Rds On (Max) @ Id, Vgs | 170 mOhm @ 1.8A, 10V |
Vgs(th) (Max) @ Id | 2.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 6.8nC @ 10V |
Vgs (Max) | ±20V |
Input Capacitance (Ciss) (Max) @ Vds | 210pF @ 25V |
FET Feature | - |
Power Dissipation (Max) | 1.9W (Tc) |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | TO-236 (SOT-23) |
Package / Case | TO-236-3, SC-59, SOT-23-3 |