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Product Introduction

IAUS165N08S5N029ATMA1

Part Number
IAUS165N08S5N029ATMA1
Manufacturer/Brand
Infineon Technologies
Description
MOSFET N-CH 80V 660A PG-HSOG-8-1
Category
Transistors - FETs, MOSFETs - Single
RoHs Status
Lead free / RoHS Compliant
Series
Automotive, AEC-Q101, OptiMOS™
Quantity
1926pcs Stock Available.

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Product Specifications

Part Number IAUS165N08S5N029ATMA1
Description MOSFET N-CH 80V 660A PG-HSOG-8-1
Manufacturer Infineon Technologies
Series Automotive, AEC-Q101, OptiMOS™
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 80V
Current - Continuous Drain (Id) @ 25°C 165A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Rds On (Max) @ Id, Vgs 2.9 mOhm @ 80A, 10V
Vgs(th) (Max) @ Id 3.8V @ 108µA
Gate Charge (Qg) (Max) @ Vgs 90nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 6370pF @ 40V
FET Feature -
Power Dissipation (Max) 167W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PG-HSOG-8-1
Package / Case 8-PowerSMD, Gull Wing

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