Home / Products / Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single, Pre-Biased / DRA9114Y0L

Product Introduction

DRA9114Y0L

Part Number
DRA9114Y0L
Manufacturer/Brand
Panasonic Electronic Components
Description
TRANS PREBIAS PNP 125MW SSMINI3
Category
Transistors - Bipolar (BJT) - Single, Pre-Biased
RoHs Status
Lead free / RoHS Compliant
Series
-
Quantity
15107pcs Stock Available.

Quick Order

Company
Contact
Phone
Email
Country
Content
Images are for reference only
See Product Specifications

Product Specifications

Part Number DRA9114Y0L
Description TRANS PREBIAS PNP 125MW SSMINI3
Manufacturer Panasonic Electronic Components
Series -
Part Status Active
Transistor Type PNP - Pre-Biased
Current - Collector (Ic) (Max) 100mA
Voltage - Collector Emitter Breakdown (Max) 50V
Resistor - Base (R1) 10 kOhms
Resistor - Emitter Base (R2) 47 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce 80 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic 250mV @ 500µA, 10mA
Current - Collector Cutoff (Max) 500nA
Frequency - Transition -
Power - Max 125mW
Mounting Type Surface Mount
Package / Case SC-89, SOT-490
Supplier Device Package SSMini3-F3-B

Latest Products for Transistors - Bipolar (BJT) - Single, Pre-Biased

DTC115GUAT106

Rohm Semiconductor

TRANS PREBIAS NPN 200MW UMT3

DTC124XUAT106

Rohm Semiconductor

TRANS PREBIAS NPN 200MW UMT3

DTC143TUAT106

Rohm Semiconductor

TRANS PREBIAS NPN 200MW UMT3

DTC144VUAT106

Rohm Semiconductor

TRANS PREBIAS NPN 200MW UMT3

DTC314TUT106

Rohm Semiconductor

TRANS PREBIAS NPN 200MW UMT3

DTC323TUT106

Rohm Semiconductor

TRANS PREBIAS NPN 200MW UMT3