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| Part Number | IXTH6N100D2 |
| Datasheet | IXTH6N100D2 datasheet |
| Description | MOSFET N-CH 1000V 6A TO247 |
| Manufacturer | IXYS |
| Series | - |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 1000V |
| Current - Continuous Drain (Id) @ 25°C | 6A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | - |
| Rds On (Max) @ Id, Vgs | 2.2 Ohm @ 3A, 0V |
| Vgs(th) (Max) @ Id | - |
| Gate Charge (Qg) (Max) @ Vgs | 95nC @ 5V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 2650pF @ 25V |
| FET Feature | Depletion Mode |
| Power Dissipation (Max) | 300W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-247 (IXTH) |
| Package / Case | TO-247-3 |