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| Part Number | SIHA4N80E-GE3 | 
| Datasheet | SIHA4N80E-GE3 datasheet | 
| Description | MOSFET N-CHAN 800V FP TO-220 | 
| Manufacturer | Vishay Siliconix | 
| Series | E | 
| Part Status | Active | 
| FET Type | N-Channel | 
| Technology | MOSFET (Metal Oxide) | 
| Drain to Source Voltage (Vdss) | 800V | 
| Current - Continuous Drain (Id) @ 25°C | 4.3A (Tc) | 
| Drive Voltage (Max Rds On, Min Rds On) | 10V | 
| Rds On (Max) @ Id, Vgs | 1.27 Ohm @ 2A, 10V | 
| Vgs(th) (Max) @ Id | 4V @ 250µA | 
| Gate Charge (Qg) (Max) @ Vgs | 32nC @ 10V | 
| Vgs (Max) | ±30V | 
| Input Capacitance (Ciss) (Max) @ Vds | 622pF @ 100V | 
| FET Feature | - | 
| Power Dissipation (Max) | 69W (Tc) | 
| Operating Temperature | -55°C ~ 150°C (TJ) | 
| Mounting Type | Through Hole | 
| Supplier Device Package | TO-220 Full Pack | 
| Package / Case | TO-220-3 Full Pack |