Home / Products / Discrete Semiconductor Products / Transistors - IGBTs - Single / HGT1S20N60A4S9A
Part Number | HGT1S20N60A4S9A |
Datasheet | HGT1S20N60A4S9A datasheet |
Description | IGBT 600V 70A 290W TO263AB |
Manufacturer | ON Semiconductor |
Series | - |
Part Status | Obsolete |
IGBT Type | - |
Voltage - Collector Emitter Breakdown (Max) | 600V |
Current - Collector (Ic) (Max) | 70A |
Current - Collector Pulsed (Icm) | 280A |
Vce(on) (Max) @ Vge, Ic | 2.7V @ 15V, 20A |
Power - Max | 290W |
Switching Energy | 105µJ (on), 150µJ (off) |
Input Type | Standard |
Gate Charge | 142nC |
Td (on/off) @ 25°C | 15ns/73ns |
Test Condition | 390V, 20A, 3 Ohm, 15V |
Reverse Recovery Time (trr) | - |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Supplier Device Package | TO-263AB |