Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single / IXTT110N10P
Part Number | IXTT110N10P |
Datasheet | IXTT110N10P datasheet |
Description | MOSFET N-CH 100V 110A TO-268 |
Manufacturer | IXYS |
Series | PolarHT™ |
Part Status | Active |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 100V |
Current - Continuous Drain (Id) @ 25°C | 110A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 15 mOhm @ 500mA, 10V |
Vgs(th) (Max) @ Id | 5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 110nC @ 10V |
Vgs (Max) | ±20V |
Input Capacitance (Ciss) (Max) @ Vds | 3550pF @ 25V |
FET Feature | - |
Power Dissipation (Max) | 480W (Tc) |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | TO-268 |
Package / Case | TO-268-3, D³Pak (2 Leads + Tab), TO-268AA |