Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single / AOU3N60_001
Part Number | AOU3N60_001 |
Datasheet | AOU3N60_001 datasheet |
Description | MOSFET N-CH 600V 2.5A IPAK |
Manufacturer | Alpha & Omega Semiconductor Inc. |
Series | - |
Part Status | Obsolete |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 600V |
Current - Continuous Drain (Id) @ 25°C | 2.5A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 3.5 Ohm @ 1.25A, 10V |
Vgs(th) (Max) @ Id | 4.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 12nC @ 10V |
Vgs (Max) | ±30V |
Input Capacitance (Ciss) (Max) @ Vds | 370pF @ 25V |
FET Feature | - |
Power Dissipation (Max) | 56.8W (Tc) |
Operating Temperature | -50°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | TO-251-3 |
Package / Case | TO-251-3 Short Leads, IPak, TO-251AA |