Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single / IRF6620TR1PBF
Part Number | IRF6620TR1PBF |
Datasheet | IRF6620TR1PBF datasheet |
Description | MOSFET N-CH 20V 27A DIRECTFET |
Manufacturer | Infineon Technologies |
Series | HEXFET® |
Part Status | Obsolete |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 20V |
Current - Continuous Drain (Id) @ 25°C | 27A (Ta), 150A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
Rds On (Max) @ Id, Vgs | 2.7 mOhm @ 27A, 10V |
Vgs(th) (Max) @ Id | 2.45V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 42nC @ 4.5V |
Vgs (Max) | ±20V |
Input Capacitance (Ciss) (Max) @ Vds | 4130pF @ 10V |
FET Feature | - |
Power Dissipation (Max) | 2.8W (Ta), 89W (Tc) |
Operating Temperature | -40°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | DIRECTFET™ MX |
Package / Case | DirectFET™ Isometric MX |