Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single / IXFN32N80P
Part Number | IXFN32N80P |
Datasheet | IXFN32N80P datasheet |
Description | MOSFET N-CH 800V 29A SOT-227B |
Manufacturer | IXYS |
Series | PolarHV™ |
Part Status | Active |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 800V |
Current - Continuous Drain (Id) @ 25°C | 29A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 270 mOhm @ 16A, 10V |
Vgs(th) (Max) @ Id | 5V @ 8mA |
Gate Charge (Qg) (Max) @ Vgs | 150nC @ 10V |
Vgs (Max) | ±30V |
Input Capacitance (Ciss) (Max) @ Vds | 8820pF @ 25V |
FET Feature | - |
Power Dissipation (Max) | 625W (Tc) |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Chassis Mount |
Supplier Device Package | SOT-227B |
Package / Case | SOT-227-4, miniBLOC |