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Product Introduction

IPB110N20N3LFATMA1

Part Number
IPB110N20N3LFATMA1
Manufacturer/Brand
Infineon Technologies
Description
MOSFET N-CH 200 D2PAK-3
Category
Transistors - FETs, MOSFETs - Single
RoHs Status
Lead free / RoHS Compliant
Series
OptiMOS™ 3
Quantity
3186pcs Stock Available.

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Product Specifications

Part Number IPB110N20N3LFATMA1
Datasheet IPB110N20N3LFATMA1 datasheet
Description MOSFET N-CH 200 D2PAK-3
Manufacturer Infineon Technologies
Series OptiMOS™ 3
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 200V
Current - Continuous Drain (Id) @ 25°C 88A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 11 mOhm @ 88A, 10V
Vgs(th) (Max) @ Id 4.2V @ 260µA
Gate Charge (Qg) (Max) @ Vgs 76nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 650pF @ 100V
FET Feature -
Power Dissipation (Max) 250W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PG-TO263-3
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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