Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single / IPB110N20N3LFATMA1
Part Number | IPB110N20N3LFATMA1 |
Datasheet | IPB110N20N3LFATMA1 datasheet |
Description | MOSFET N-CH 200 D2PAK-3 |
Manufacturer | Infineon Technologies |
Series | OptiMOS™ 3 |
Part Status | Active |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 200V |
Current - Continuous Drain (Id) @ 25°C | 88A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 11 mOhm @ 88A, 10V |
Vgs(th) (Max) @ Id | 4.2V @ 260µA |
Gate Charge (Qg) (Max) @ Vgs | 76nC @ 10V |
Vgs (Max) | ±20V |
Input Capacitance (Ciss) (Max) @ Vds | 650pF @ 100V |
FET Feature | - |
Power Dissipation (Max) | 250W (Tc) |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | PG-TO263-3 |
Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |