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Part Number | IPI60R165CPAKSA1 |
Datasheet | IPI60R165CPAKSA1 datasheet |
Description | MOSFET N-CH 650V 21A TO-262 |
Manufacturer | Infineon Technologies |
Series | CoolMOS™ |
Part Status | Not For New Designs |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 650V |
Current - Continuous Drain (Id) @ 25°C | 21A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 165 mOhm @ 12A, 10V |
Vgs(th) (Max) @ Id | 3.5V @ 790µA |
Gate Charge (Qg) (Max) @ Vgs | 52nC @ 10V |
Vgs (Max) | ±20V |
Input Capacitance (Ciss) (Max) @ Vds | 2000pF @ 100V |
FET Feature | - |
Power Dissipation (Max) | 192W (Tc) |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | PG-TO262-3 |
Package / Case | TO-262-3 Long Leads, I²Pak, TO-262AA |