Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single / IXTA1R6N50D2
Part Number | IXTA1R6N50D2 |
Datasheet | IXTA1R6N50D2 datasheet |
Description | MOSFET N-CH 500V 1.6A D2PAK |
Manufacturer | IXYS |
Series | - |
Part Status | Active |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 500V |
Current - Continuous Drain (Id) @ 25°C | 1.6A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 2.3 Ohm @ 800mA, 0V |
Vgs(th) (Max) @ Id | - |
Gate Charge (Qg) (Max) @ Vgs | 23.7nC @ 5V |
Vgs (Max) | ±20V |
Input Capacitance (Ciss) (Max) @ Vds | 645pF @ 25V |
FET Feature | Depletion Mode |
Power Dissipation (Max) | 100W (Tc) |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | TO-263 (IXTA) |
Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |