Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single / TSM048NB06LCR RLG
Part Number | TSM048NB06LCR RLG |
Datasheet | TSM048NB06LCR RLG datasheet |
Description | MOSFET SINGLE N-CHANNEL TRENCH |
Manufacturer | Taiwan Semiconductor Corporation |
Series | - |
Part Status | Active |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 60V |
Current - Continuous Drain (Id) @ 25°C | 16A (Ta), 107A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
Rds On (Max) @ Id, Vgs | 4.8 mOhm @ 16A, 10V |
Vgs(th) (Max) @ Id | 2.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 105nC @ 10V |
Vgs (Max) | ±20V |
Input Capacitance (Ciss) (Max) @ Vds | 6253pF @ 30V |
FET Feature | - |
Power Dissipation (Max) | 3.1W (Ta), 136W (Tc) |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | 8-PDFN (5x6) |
Package / Case | 8-PowerTDFN |