Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single / IXTH120P065T
Part Number | IXTH120P065T |
Datasheet | IXTH120P065T datasheet |
Description | MOSFET P-CH 65V 120A TO-247 |
Manufacturer | IXYS |
Series | TrenchP™ |
Part Status | Active |
FET Type | P-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 65V |
Current - Continuous Drain (Id) @ 25°C | 120A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 10 mOhm @ 500mA, 10V |
Vgs(th) (Max) @ Id | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 185nC @ 10V |
Vgs (Max) | ±15V |
Input Capacitance (Ciss) (Max) @ Vds | 13200pF @ 25V |
FET Feature | - |
Power Dissipation (Max) | 298W (Tc) |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | TO-247 (IXTH) |
Package / Case | TO-247-3 |