Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Arrays / ZXMN2A04DN8TC
Part Number | ZXMN2A04DN8TC |
Datasheet | ZXMN2A04DN8TC datasheet |
Description | MOSFET 2N-CH 20V 5.9A 8SOIC |
Manufacturer | Diodes Incorporated |
Series | - |
Part Status | Obsolete |
FET Type | 2 N-Channel (Dual) |
FET Feature | Logic Level Gate |
Drain to Source Voltage (Vdss) | 20V |
Current - Continuous Drain (Id) @ 25°C | 5.9A |
Rds On (Max) @ Id, Vgs | 25 mOhm @ 5.9A, 4.5V |
Vgs(th) (Max) @ Id | 700mV @ 250µA (Min) |
Gate Charge (Qg) (Max) @ Vgs | 22.1nC @ 5V |
Input Capacitance (Ciss) (Max) @ Vds | 1880pF @ 10V |
Power - Max | 1.8W |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Package / Case | 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package | 8-SOP |