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| Part Number | ZXMN2A04DN8TC |
| Datasheet | ZXMN2A04DN8TC datasheet |
| Description | MOSFET 2N-CH 20V 5.9A 8SOIC |
| Manufacturer | Diodes Incorporated |
| Series | - |
| Part Status | Obsolete |
| FET Type | 2 N-Channel (Dual) |
| FET Feature | Logic Level Gate |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25°C | 5.9A |
| Rds On (Max) @ Id, Vgs | 25 mOhm @ 5.9A, 4.5V |
| Vgs(th) (Max) @ Id | 700mV @ 250µA (Min) |
| Gate Charge (Qg) (Max) @ Vgs | 22.1nC @ 5V |
| Input Capacitance (Ciss) (Max) @ Vds | 1880pF @ 10V |
| Power - Max | 1.8W |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | 8-SOIC (0.154", 3.90mm Width) |
| Supplier Device Package | 8-SOP |